onsemi HUF75332P3

Name: onsemi HUF75332P3
Brand: onsemi
SKU: HUF75332P3

N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ

$ 1.1

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Verical	9	HUF75332P3	787	286					1.089	0.971
Rochester Electronics	2	HUF75332P3	9,713					1.050	0.872	0.777	10h
DigiKey		HUF75332P3FS-ND	354	1	Tube	2.570	2.570	1.139	1.139	1.139
Newark		HUF75332P3	0	800					1.320	1.100
Avnet		HUF75332P3	0	1600							1d

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HUF75332P3.

IHS

Datasheet10 pages21 years ago

Newark

onsemi

Fairchild Semiconductor

iiiC

Inventory History

3 month trend:

+0.00%

Alternate Parts

This Part

Alternate Parts

onsemiHUF75332P3

onsemiHUF75332P3_NL

Price @ 1000

$ 1.1

$ 0.68

Stock

238,465

30,017

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

60 A

Threshold Voltage

Rds On Max

19 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

145 W

Input Capacitance

1.3 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-06-01

Lifecycle StatusEOL (Last Updated: 5 days ago)

LTB Date2025-10-08

LTD Date2026-04-08

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

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Descriptions

Descriptions of onsemi HUF75332P3 provided by its distributors.

N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ

onsemi

52 A 55 V 0.019 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Component Stockers USA

55 V, 60 A, 0.019 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

Newark

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.

Fairchild Semiconductor