Infineon IRFZ48NPBF

Name: Infineon IRFZ48NPBF
Brand: Infineon
SKU: IRFZ48NPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; TO-220AB; PD 130W; gFS 24S

$ 0.584

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	63J7152	718	1		1.610	0.960	0.887	0.683	0.664	1d
Newark		IRFZ48NPBF	9,705	1		1.570	0.959	0.871	0.667	0.646
Future Electronics	2	IRFZ48NPBF	34,850	50	Tube			0.510	0.495	0.455
Arrow Electronics	2	IRFZ48NPBF	29,994	1		0.861	0.628	0.583	0.441	0.399
Rutronik		TMOSP12523	2,000	50				0.413	0.330	0.330	20h

Inventory History

3 month trend: +9.33%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFZ48NPBF.

IHS

Datasheet9 pages15 years ago

Datasheet9 pages25 years ago

Newark

Factory Futures

DigiKey

iiiC

Inventory History

3 month trend:

+9.33%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFZ48NPBF

InfineonAUIRFZ48N

Price @ 1000

$ 0.584

$ 1.377

Stock

2,096,048

271,757

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220-3

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

64 A

69 A

Threshold Voltage

4 V

Rds On Max

14 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

94 W

160 W

Input Capacitance

1.97 nF

1.9 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFZ48NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 55 Volt 64 Amp 3 Pin 3+ Tab TO-220AB

Jameco

Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Transistor MOSFET N-Ch. 53A/55V TO220 IRFZ 48 N PBF

Rapid Electronics

Trans MOSFET N-CH 55V 64A 3-Pin(3+Tab) TO-220AB

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Power Dissipation Ptot Max:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon