onsemi HGTG12N60A4

Name: onsemi HGTG12N60A4
Brand: onsemi
SKU: HGTG12N60A4

Trans IGBT Chip N-CH 600V 54A 3-Pin (3+Tab) TO-247 Rail

Obsolete

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Distributor	SKU		Min	Pkg
Newark	HGTG12N60A4	0	300
Avnet	HGTG12N60A4	0	300							1d
Win Source	WS-HGTG12N60A4	2,000	8			6.771	4.514	4.514	4.514	1d
Worldway Electronics	HGTG12N60A4	16,868	7	Tube		1.690	1.638	1.552	1.552	23h
Chipsmall Limited	HGTG12N60A4	500,000	1		2.000	1.800	1.150	1.000	1.000	5h

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGTG12N60A4.

Newark

Datasheet0 pages0 years ago

Fairchild Semiconductor

Farnell

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-08-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-02-23

LTD Date2012-08-23

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Descriptions

Descriptions of onsemi HGTG12N60A4 provided by its distributors.

Trans IGBT Chip N-CH 600V 54A 3-Pin (3+Tab) TO-247 Rail

Verical

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:TO-247 ;RoHS Compliant: Yes

Newark

IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4; Fall Time tf:18ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Power Dissipation Ptot Max:167W; Pulsed Current Icm:96A; Rise Time:8ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Fairchild Semiconductor