onsemi HGTG20N60B3

HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247
$ 2.548
Obsolete

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGTG20N60B3.

onsemi

Datasheet8 pages6 years ago
Datasheet0 pages0 years ago

Farnell

Upverter

IHS

Newark

Inventory History

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Alternate Parts

Price @ 1000
$ 2.548
$ 1.33
Stock
206,750
27,880
Authorized Distributors
4
1
Mount
Through Hole
-
Case/Package
TO-247-3
TO-247
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
40 A
40 A
Power Dissipation
165 W
-
Collector Emitter Saturation Voltage
1.8 V
-
Reverse Recovery Time
-
-

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-02
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi HGTG20N60B3 provided by its distributors.

HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247
40A, 600V, UFS Series N-Channel IGBTs | IGBT 600V 40A 165W TO247
Trans IGBT Chip N-CH 600V 40A 165W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes |Onsemi HGTG20N60B3..
PWR IGBT UFS 20A 600V TF<200NS N-CH TO-247
IGBT UFS N-CHAN 600V 40A TO-247
IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
165W 1.8V 600V 40A TO-247-3 15.87mm*20.82mm*4.82mm
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Part Number Aliases

This part may be known by these alternate part numbers:

  • HGTG20N60B3..