onsemi FQB6N80TM

Name: onsemi FQB6N80TM
Brand: onsemi
SKU: FQB6N80TM

N-Channel Power MOSFET, QFET®, 800 V, 5.8 A, 1.95 Ω, D2PAK

$ 1.11

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min
Avnet	FQB6N80TM	11,200	325				2.026	1.925	1d
Verical	FQB6N80TM	42,400	281				1.110	0.990
Arrow Electronics	FQB6N80TM	4	1	0.593	0.593	0.593	0.593	0.593
Rochester Electronics	FQB6N80TM	42,400				1.070	0.888	0.792	10h
Flip Electronics	FQB6N80TM	11,200							1d

Inventory History

3 month trend: +346%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQB6N80TM.

IHS

Datasheet8 pages12 years ago

Datasheet0 pages0 years ago

Future Electronics

onsemi

Fairchild Semiconductor

element14 APAC

Inventory History

3 month trend:

+346%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-11-10

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descriptions

Descriptions of onsemi FQB6N80TM provided by its distributors.

N-Channel Power MOSFET, QFET®, 800 V, 5.8 A, 1.95 Ω, D2PAK

onsemi

TRANSISTOR, N-CHANNEL, QFET MOSFET, 800V, 5.8A, 1.95 MOHM AT VGS 10V, D2PAK

RS (Formerly Allied Electronics)

N-Channel 800 V 1.95 Ohm Surface Mount Mosfet - D2PAK-3

Future Electronics

Trans MOSFET N-CH 800V 5.8A 3-Pin(2+Tab) D2PAK T/R

Avnet

Power Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 800V, 5.8A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 158W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor