onsemi FQB22P10TM

TRANSISTOR, P-CHANNEL, QFET MOSFET, -100V, 22A, 125 MOHM, 175C MAX, D2PAK

Trans MOSFET P-CH 100V 22A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 22A D2PAK

Power MOSFET, P Channel, 100 V, 22 A, 0.125 ohm, TO-263 (D2PAK), Surface Mount

P-Channel MOSFET, QFET® -100V, -22A, 125mΩ

Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

MOSFET, P CH, -100V, -22A, TO-263AB-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.096ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.75W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Current Id Max: 15.6mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 88A; Rate of Voltage Change dv / dt: 6V/ns; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V