onsemi FQA70N10

Name: onsemi FQA70N10
Brand: onsemi
SKU: FQA70N10

N-Channel Power MOSFET, QFET®, 100 V, 70 A, 23 mΩ, TO-3P

$ 1.51

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min
Avnet		FQA70N10	450	30			1.550	1.393	1.393	1d
Newark	2	FQA70N10	450	30			2.000	1.980	1.980
Arrow Electronics	2	FQA70N10	1,900	1	1.720	1.478	1.478	1.435	1.435
Verical	4	FQA70N10	11,280	30			1.498	1.416	1.416
Rochester Electronics		FQA70N10	746				1.390	1.240	1.170	1h

Inventory History

3 month trend: -4.66%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQA70N10.

IHS

Datasheet8 pages2 years ago

Datasheet8 pages12 years ago

Newark

onsemi

Factory Futures

Farnell

Inventory History

3 month trend:

-4.66%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQA70N10 provided by its distributors.

N-Channel Power MOSFET, QFET®, 100 V, 70 A, 23 mΩ, TO-3P

onsemi

N-Channel 100 V 0.023 Ohm Through Hole Mosfet - TO-3PN

Future Electronics

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor