onsemi FQA170N06

Name: onsemi FQA170N06
Brand: onsemi
SKU: FQA170N06

N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P

$ 3.791

EOL

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Distributor	SKU		Min	Pkg
Verical	FQA170N06	250	76				4.700	4.213	3.963
Rochester Electronics	FQA170N06	250					3.760	3.370	3.170	28m
Farnell	FQA170N06.	0	1		1.114*	1.114*	1.114*	1.114*	1.114*	1d
Microchip USA	FQA170N06	276	600	Tray				4.152	4.152	17h
Win Source	WS-FQA170N06	42,900	9			6.741	4.494	4.494	4.494	1h

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQA170N06.

IHS

Datasheet8 pages12 years ago

Datasheet0 pages0 years ago

onsemi

Fairchild Semiconductor

Farnell

Newark

Inventory History

3 month trend:

+0.00%

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-09-13

Lifecycle StatusEOL (Last Updated: 4 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Descriptions

Descriptions of onsemi FQA170N06 provided by its distributors.

N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P

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Trans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P(N) Rail

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FAIRCHILD SEMICONDUCTORFQA170N06N CHANNEL MOSFET, 60V, 170A, TO-3PN

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Power Field-Effect Transistor, 170A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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60V 170A 4.5´Î@10V85A 375W 4V@250uA 620pF@25V N Channel 7.2nF@25V 220nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS

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MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor