Infineon IRF2907ZPBF

Name: Infineon IRF2907ZPBF
Brand: Infineon
SKU: IRF2907ZPBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 3.5MILLIOHMS; Id 170A; TO-220AB; Pd 300W; -55DE

$ 1.72

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRF2907ZPBF	2,566	1		3.695	2.509	1.978	1.730	1.730
Rutronik		TMOSP11743	1,300	50				2.140	1.710	1.710	20h
Rochester Electronics	2	IRF2907ZPBF	100,943					1.580	1.410	1.330	13h
RS (Formerly Allied Electronics)		IRF2907ZPBF	0	100	Bulk			5.530	4.970	4.970	4h
Farnell		IRF2907ZPBF	0	1		4.421*	3.010*	1.895*	1.895*	1.895*	13h

Inventory History

3 month trend: +283%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF2907ZPBF.

IHS

Datasheet11 pages15 years ago

Datasheet12 pages15 years ago

Datasheet13 pages21 years ago

Farnell

Newark

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+283%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF2907ZPBF

InfineonAUIRF2907Z

Price @ 1000

$ 1.72

$ 1.485

Stock

404,744

188,405

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

7.5 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-06-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRF2907ZPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.5Milliohms;ID 170A;TO-220AB;PD 300W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 75 V 4.5 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W

Distrelec

Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 75V, 170A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:75A; Device Marking:IRF2907ZPBF; Package / Case:TO-220; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon