Infineon IRFB3207ZPBF
MOSFET N-CH 75V 120A TO-220AB / Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
$ 1.29
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +0.28%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
Download Infineon IRFB3207ZPBF symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.29
$ 1.22
Stock
917,508
142,154
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
4 V
Rds On Max
4.1 mΩ
4.1 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
6.92 nF
6.92 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-03
Lifecycle StatusProduction (Last Updated: 3 months ago)
Related Parts
InfineonIRFB3206PBF
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
InfineonIRF2907ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.5Milliohms;ID 170A;TO-220AB;PD 300W;-55de
InfineonIRFB3207PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.6Milliohms;ID 180A;TO-220AB;PD 330W;-55de
Descriptions
Descriptions of Infineon IRFB3207ZPBF provided by its distributors.
MOSFET N-CH 75V 120A TO-220AB / Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, TO-220AB, Pb-Free
Single N-Channel 75 V 4.1 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Infineon NChannelMOSTube, Vds=75 V, 170 A, TO-220ABencapsulation, Through hole mounting
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W
2.5W,44W 20V 4V@ 250uA 15nC@ 10V 1N 100V 530m¦¸@ 3.3A,10V 6.6A 470pF@25V TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 75V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3207; Current Id Max:120A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:670A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.28%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Current Rating170 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.92 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.1 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max4.1 mΩ
Recovery Time54 ns
Resistance4.1 MΩ
Rise Time68 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)75 V
Dimensions
Height20 mm
Length10.66 mm
Width4.82 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements