onsemi FQA13N80-F109

Name: onsemi FQA13N80-F109
Brand: onsemi
SKU: FQA13N80-F109

MOSFET Transistor, N Channel, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V

$ 2.79

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	FQA13N80-F109	12,260					2.800	2.510	2.360	21h
DigiKey		FQA13N80-F109-ND	168	1	Tube	6.870	6.870	3.937	2.820	2.798
Verical		FQA13N80_F109	310	3			3.473	3.473	3.194	3.194
Arrow Electronics	2	FQA13N80-F109	310	1		5.768	3.473	3.473	3.194	3.194
Newark		FQA13N80-F109	0	90				4.750	4.050	4.050

Inventory History

3 month trend: -0.64%

CAD Models

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Datasheets & Documents

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IHS

Datasheet8 pages2 years ago

Master Electronics

onsemi

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Inventory History

3 month trend:

-0.64%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-04-23

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQA13N80-F109 provided by its distributors.

MOSFET Transistor, N Channel, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V

Newark

N-Channel Power MOSFET, QFET®, 800 V, 12.6 A, 750 mΩ, TO-3P

onsemi

Single N-Channel 800 V 0.75 Ohm 88 nC 300 W DMOS Flange Mount Mosfet - TO-3PN

Future Electronics

MOSFET, N-CH, 800V, 12.6A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor