onsemi FQP12N60C

Name: onsemi FQP12N60C
Brand: onsemi
SKU: FQP12N60C

Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220

$ 1.17

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Avnet		FQP12N60C	1,738	532		1.147	1.106	1d
Rochester Electronics	2	FQP12N60C	3,340		1.410	1.170	1.040	1d
Verical	2	FQP12N60C	3,340	213		1.463	1.300
Flip Electronics		FQP12N60C	869					12h
Win Source		WS-FQP12N60C	70	35	1.343	1.091	1.091	44m

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP12N60C.

Upverter

Technical Drawing1 page6 years ago

Farnell

IHS

onsemi

Newark

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQP12N60C

onsemiFQP12N60

Price @ 1000

$ 1.17

$ 1.485

Stock

164,560

193,458

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

TO-220

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

12 A

10.5 A

Threshold Voltage

4 V

Rds On Max

650 mΩ

700 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

225 W

180 W

Input Capacitance

2.29 nF

1.9 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-05

Lifecycle StatusObsolete (Last Updated: 7 hours ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 7 hours ago)

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Descriptions

Descriptions of onsemi FQP12N60C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220

onsemi

FQP12N60C Series 600 V 0.65 Ohm Through Hole N-Channel Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:225W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:650mohm; Package / Case:TO-220; Power Dissipation Pd:225W; Power Dissipation Pd:225W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Fairchild Semiconductor