STMicroelectronics STW12NK90Z
$ 2.84
Production
Inventory History
3 month trend: -6.44%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW12NK90Z.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STW12NK90Z provided by its distributors.
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
N-Channel 900 V 0.88 Ohm Flange Mount SuperMESH Power MosFet - TO-247-3
STW12NK90Z N-CHANNEL MOSFET TRANSISTOR, 11 A, 900 V, 3-PIN TO-247
Power Field-Effect Transistor, 11A I(D), 900V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N-Ch, 900V, 11A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STW12NK90Z
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -6.44%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance880 mΩ
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.5 nF
Max Operating Temperature150 °C
Max Power Dissipation230 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation230 W
Rds On Max880 mΩ
Resistance880 mΩ
Rise Time20 ns
Threshold Voltage3.75 V
Turn-Off Delay Time88 ns
Turn-On Delay Time31 ns
Voltage Rating (DC)900 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW12NK90Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant