onsemi FGA15N120ANTDTU-F109

IGBT Single Transistor, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3
Obsolete

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FGA15N120ANTDTU-F109.

Newark

Datasheet10 pages4 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

IHS

onsemi

Farnell

Fairchild Semiconductor

CAD Models

Download onsemi FGA15N120ANTDTU-F109 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Related Parts

International RectifierIRG7PH28UD1PBF
Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247AC Tube
Igbt Single Transistor, 30 A, 2.1 V, 278 W, 1.2 Kv, To-247, 3
InfineonIRG4PH40KPBF
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
167W 21A 1.2kV NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS
InfineonIRG4PH30KPBF
IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC
Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
LittelfuseIXYP8N90C3
Planar Series - 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, TO-220AB, RoHS

Descriptions

Descriptions of onsemi FGA15N120ANTDTU-F109 provided by its distributors.

IGBT Single Transistor, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Tube
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
IGBT, SINGLE, 1.2KV, 30A, TO-3P-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 186W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-3P; No. of Pin
ON Semiconductor, FGA15N120ANTDTU-F109
RS APAC
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Part Number Aliases

This part may be known by these alternate part numbers:

  • FGA15N120ANTDTU F109
  • FGA15N120ANTDTUF109
  • FGA15N120ANTDTU_F109