onsemi FGA15S125P
Obsolete
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 2.27
Stock
114,878
48,858
Authorized Distributors
0
3
Mount
Through Hole
Through Hole
Case/Package
-
TO-247
Collector Emitter Breakdown Voltage
1.25 kV
1.2 kV
Max Collector Current
30 A
30 A
Power Dissipation
136 W
-
Collector Emitter Saturation Voltage
2.72 V
2.1 V
Reverse Recovery Time
-
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-17
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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Descriptions
Descriptions of onsemi FGA15S125P provided by its distributors.
Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
IGBT, 1250V, 15A, Shorted-anode
Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
RAIL / 1250V 15A FS SA Trench IGBT
1250 V, 15 A Shorted-anode IGBT
INSULATED GATE BIPOLAR TRANSISTO
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage1.25 kV
Collector Emitter Saturation Voltage2.72 V
Collector Emitter Voltage (VCEO)1.25 kV
Element ConfigurationSingle
Max Collector Current30 A
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation136 W
Schedule B8541290080
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements