onsemi FDME1034CZT

Name: onsemi FDME1034CZT
Brand: onsemi
SKU: FDME1034CZT

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.055 ohm

$ 0.357

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Distributor		SKU	Min	Pkg
Newark	2	FDME1034CZT	5K	Tape & Reel			0.352
Onlinecomponents.com		FDME1034CZT	100	Bulk	0.518	0.390	0.300
Master Electronics		FDME1034CZT	100		0.518	0.390	0.300
Avnet		FDME1034CZT	5K				0.223	1d
Future Electronics		FDME1034CZT	5K	Tape & Reel			0.325

Inventory History

3 month trend: -88.80%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDME1034CZT.

IHS

Datasheet11 pages3 years ago

Datasheet0 pages0 years ago

Upverter

element14 APAC

Future Electronics

onsemi

Inventory History

3 month trend:

-88.80%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-12-23

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDME1034CZT provided by its distributors.

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.055 ohm

Avnet Silica

Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

MOSFET,NP CH,W,20V,MICROFET1.6X1.6; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.4W

Farnell

This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Fairchild Semiconductor