onsemi FCP11N60N
$ 1.6
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-06
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Related Parts
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N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
InfineonIPP60R299CPXKSA1
96W 20V 2.5V 22nC@ 10V 1N 650V 299m¦¸@ 10V 11A 1.1nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
STMicroelectronicsSTP15NM60ND
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
Descriptions
Descriptions of onsemi FCP11N60N provided by its distributors.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220
94W(Tc) 30V 4V@ 250¦ÌA 35.6nC@ 10V 1N 600V 299m¦¸@ 5.4A,10V 10.8A 1.505nF@100V TO-220-3 9.4mm
FCH47N60 Series 600 V 0.38 Ohms Flange Mount N-Channel MOSFET - TO-220
Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,600V,10.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)10.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.505 nF
Max Operating Temperature150 °C
Max Power Dissipation94 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation94 W
Rds On Max299 mΩ
Resistance380 MΩ
Rise Time9.1 ns
Threshold Voltage2 V
Turn-Off Delay Time42 ns
Turn-On Delay Time13.6 ns
Dimensions
Height15.9 mm
Length10.16 mm
Width4.7 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements