onsemi FCP9N60N
$ 1.395
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FCP9N60N | 745 | 216 | |||||||||
| Rochester Electronics | FCP9N60N | 33,508 | 5h | |||||||||
| Microchip USA | FCP9N60N | 302 | 150 | Bulk | 21h | |||||||
| Win Source | WS-FCP9N60N | 7,900 | 30 | 6h | ||||||||
| Worldway Electronics | FCP9N60N | 28,561 | 7 | Tube | 4h |
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
Download onsemi FCP9N60N symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 EE Concierge | SymbolFootprint | ||
 Ultra Librarian | SymbolFootprint | Download |
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.395
$ 1.22
Stock
288,758
310,895
Authorized Distributors
2
6
Mount
Through Hole
-
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
600 V
650 V
Continuous Drain Current (ID)
9 A
10 A
Threshold Voltage
2 V
-
Rds On Max
385 mΩ
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
83.3 W
83 W
Input Capacitance
1.24 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Related Parts
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N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
InfineonIPP60R299CPXKSA1
96W 20V 2.5V 22nC@ 10V 1N 650V 299m¦¸@ 10V 11A 1.1nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
STMicroelectronicsSTP10NK60Z
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
Descriptions
Descriptions of onsemi FCP9N60N provided by its distributors.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220AB Rail
N-CHANNEL SUPREMOS MOSFET Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 9A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:27A
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance385 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10.2 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.24 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83.3 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation83.3 W
Rds On Max385 mΩ
Rise Time8.7 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time36.9 ns
Turn-On Delay Time12.7 ns
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements