Nexperia BCP68-25,115

Name: Nexperia BCP68-25,115
Brand: Nexperia
SKU: BCP68-25,115

Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

$ 0.207

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		BCP68-25,115	500					0.182	0.151	0.134	15h
TME	2	BCP68-25.115	0	1		0.390	0.261	0.155	0.155	0.155	14h
Newark	2	BCP68-25,115	0	1	Cut Tape	1.200	0.749	0.643	0.643	0.643
Avnet		BCP68-25,115	0	12K							17h
Schukat		BCP68-25.115	4,200	100				0.410	0.325	0.282	17h

Inventory History

3 month trend: +920%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia BCP68-25,115.

IHS

Datasheet12 pages2 years ago

Datasheet0 pages0 years ago

Upverter

element14 APAC

element14

Inventory History

3 month trend:

+920%

CAD Models

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Alternate Parts

This Part

Alternate Parts

NexperiaBCP68-25,115

NexperiaBCP68,115

Price @ 1000

$ 0.207

$ 0.23

Stock

480,237

421,312

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-223

Polarity

NPN

Collector Emitter Breakdown Voltage

20 V

Max Collector Current

1 A

Transition Frequency

40 MHz

Collector Emitter Saturation Voltage

500 mV

600 mV

hFE Min

160

Power Dissipation

1.35 W

1.5 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-09-01

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Descriptions

Descriptions of Nexperia BCP68-25,115 provided by its distributors.

Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

IHS

Trans GP BJT NPN 20V 2A 1350mW Automotive 4-Pin(3+Tab) SC-73 T/R / TRANS NPN 20V 2A SOT223

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20 V, 2 A NPN medium power transistor

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BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Farnell

Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:170MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain Max (hfe):160 ;RoHS Compliant: Yes

Newark