STMicroelectronics STP16N65M5
$ 1.425
Production
Inventory History
3 month trend: +12.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP16N65M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP16N65M5 provided by its distributors.
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220
STP16N65M5 N-CHANNEL MOSFET TRANSISTOR, 12 A, 650 V, 3-PIN TO-220
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, N CH, 650V, 12A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
650 V, 12 A, 0.240 OHM N-CHANNEL MDMESH V POWER MOSFET IN TO-220 Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +12.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance279 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.25 nF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max279 mΩ
Resistance299 mΩ
Rise Time9 ns
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time25 ns
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP16N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant