Infineon SPB17N80C3ATMA1

Power MOSFET, N Channel, 800 V, 17 A, 290 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount

Single N-Channel 800 V 290 mOhm 88 nC CoolMOS® Power Mosfet - D2PAK

MOSFET N-CH 800V 17A TO263-3 N-Channel 800 V 17A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2

Pwr Mosfet, N Channel, 800V, 17A; |Infineon Technologies SPB17N80C3ATMA1.

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

227W 20V 3.9V 88nC@ 10V 1individualNChannel 800V 290mΩ@ 10V 17A 2.3nF@ 100V D2PAK Bracket mounting，SMD mount 10mm*9.25mm*4.4mm

MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:17A; On State Resistance:0.29ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride

800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar