Infineon SPB20N60C3ATMA1

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount

Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) D2PAK T/R

208KW 30V 3.9V 87nC@ 10V 1N 650V 190m¦¸@ 10V 20A 2.4nF@ 25V D2PAK , 10mm*925cm*4.4mm

COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

MOSFET, N, COOLMOS, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:208W; Power Dissipation Pd:208W; Pulse Current Idm:62.1A; SMD Marking:20N60C3; Termination Type:SMD; Voltage Vds Typ:650V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V