Infineon IPB60R165CPATMA1

Name: Infineon IPB60R165CPATMA1
Brand: Infineon
SKU: IPB60R165CPATMA1

Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) D2PAK T/R

$ 1.926

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Arrow Electronics		IPB60R165CPATMA1	150	1		1.834	1.819	1.790	1.790	1.790
DigiKey	3	IPB60R165CPATMA1CT-ND	5,926	1	Cut Tape	5.020	3.324	2.360	2.059	2.059
Newark		IPB60R165CPATMA1	0	1	Cut Tape	5.060	3.350	2.380	1.990	1.990
Avnet		IPB60R165CPATMA1	0	1K					1.922	1.725	6d
Future Electronics		IPB60R165CPATMA1	0	1K	Tape & Reel				1.960	1.930

Inventory History

3 month trend: +58.39%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB60R165CPATMA1.

IHS

Datasheet10 pages16 years ago

Farnell

element14 APAC

Inventory History

3 month trend:

+58.39%

CAD Models

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-06-19

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IPB60R165CPATMA1 provided by its distributors.

Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):165mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; Package / Case:TO-263; Power Dissipation Pd:192W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

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