Infineon IPB60R199CPATMA1

Name: Infineon IPB60R199CPATMA1
Brand: Infineon
SKU: IPB60R199CPATMA1

MOSFET N-CH 600V 16A TO263-3 N-Channel 600 V 16A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2

$ 1.604

EOL

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Min

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USD

21h

Rochester Electronics

USD

19h

IPB60R199CPATMA1CT-ND

2,975

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3 month trend: -15.56%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB60R199CPATMA1.

Official Datasheet11 years ago

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3 month trend:

-15.56%

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-04-04

Lifecycle StatusEOL (Last Updated: 2 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IPB60R199CPATMA1 provided by its distributors.

MOSFET N-CH 600V 16A TO263-3 N-Channel 600 V 16A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2

Eurochip Technologies LTD

Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Abacus Technologies

139W 20V 2.5V 32nC@ 10V 1individualNChannel 650V 199mΩ@ 10V 16A 1.52nF@ 100V TO-263 SMD mount，glue mount 10mm*9.25mm*4.4mm

UnikeyIC

CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

Infineon

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:139W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-263; Power Dissipation Pd:139W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC