Infineon IRLR2905ZTRPBF

Name: Infineon IRLR2905ZTRPBF
Brand: Infineon
SKU: IRLR2905ZTRPBF

In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF

$ 0.496

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	IRLR2905ZTRPBF	2,721	5	Cut Tape		0.985	0.802	0.731	0.731
Rutronik		TMOSP12621	2,000	2K						0.316	18h
Rochester Electronics		IRLR2905ZTRPBF	2,195					0.449	0.373	0.332	10h
DigiKey	3	IRLR2905ZTRPBFCT-ND	290	1	Cut Tape	1.790	1.129	0.750	0.534	0.534
Arrow Electronics	3	IRLR2905ZTRPBF	3,650	1		1.252	0.872	0.613	0.449	0.344

Inventory History

3 month trend: +18.80%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR2905ZTRPBF.

Newark

Datasheet12 pages15 years ago

Datasheet11 pages16 years ago

IHS

iiiC

Inventory History

3 month trend:

+18.80%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR2905ZTRPBF

InfineonAUIRLR2905ZTRL

Price @ 1000

$ 0.496

$ 1.355

Stock

1,050,594

248,970

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

Rds On Max

13.5 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

110 W

Input Capacitance

1.57 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-02

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRLR2905ZTRPBF provided by its distributors.

In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF

Fly-Wing Technology

Trans MOSFET N-CH Si 55V 60A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 55V 42A DPAK

Win Source

Single N-Channel 55 V 22.5 mOhm 35 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC

Infineon

N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current, Id:42mA; Drain Source Voltage, Vds:55V; On Resistance, Rds(on):0.135ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 13.5 / Gate-Source Voltage V = 16 / Fall Time ns = 33 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

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