Infineon IRFR48ZPBF

Name: Infineon IRFR48ZPBF
Brand: Infineon
SKU: IRFR48ZPBF

Single N-Channel 55 V 11 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA

$ 0.994

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFR48ZPBF	288				0.768	0.638	0.569	23h
RS (Formerly Allied Electronics)	IRFR48ZPBF	0	5	Bulk	1.500	1.350	1.350	1.350	12h
Farnell	IRFR48ZPBF	0	5		1.077*	0.826*	0.520*	0.510*	23h
Win Source	WS-IRFR48ZPBF	33,380	80			0.730	0.486	0.486	23h
Worldway Electronics	IRFR48ZPBF	12,484	7	Tube	0.176	0.171	0.162	0.162	22h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR48ZPBF.

element14 APAC

Datasheet11 pages15 years ago

IHS

Newark

iiiC

Future Electronics

Inventory History

3 month trend:

+0.00%

Alternate Parts

This Part

Alternate Parts

InfineonIRFR48ZPBF

InfineonIRFR48ZTRPBF

Price @ 1000

$ 0.994

$ 0.514

Stock

186,756

282,968

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

4 V

Rds On Max

11 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

91 W

Input Capacitance

1.72 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR48ZPBF provided by its distributors.

Single N-Channel 55 V 11 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:91W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:91W; Power Dissipation Pd:91W; Power Dissipation Ptot Max:91W; Pulse Current Idm:250A; SMD Marking:IRFR48ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC