Infineon IRLML2402TRPBF

Name: Infineon IRLML2402TRPBF
Brand: Infineon
SKU: IRLML2402TRPBF

Mosfet, Power; N-ch; Vdss 20V; Rds(on) 0.25 Ohm; Id 1.2A; MICRO3; Pd 540MW; Vgs +/-12V

$ 0.335

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Future Electronics		IRLML2402TRPBF	600,000	3K	Tape & Reel					0.090
Arrow Electronics		IRLML2402TRPBF	3	1		0.409	0.409	0.409	0.409	0.409
RS (Formerly Allied Electronics)		IRLML2402TRPBF	0	1	Bulk	0.260	0.260	0.260	0.260	0.260	4h
Farnell	4	IRLML2402TRPBF	0	1	Custom Reel	275.21*	261.34*	261.34*	261.34*	261.34*	3h
Verical		IRLML2402TRPBF	2,715	269					0.272	0.264

Inventory History

3 month trend: -15.90%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML2402TRPBF.

Farnell

Datasheet10 pages12 years ago

Datasheet9 pages19 years ago

Datasheet9 pages23 years ago

IHS

Upverter

Newark

iiiC

Inventory History

3 month trend:

-15.90%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLML2402TRPBF

Diodes Inc.DMN2112SN-7

Price @ 1000

$ 0.335

$ 0.52

Stock

8,109,450

194,114

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

760 mA

1.2 A

Threshold Voltage

700 mV

1.2 V

Rds On Max

250 mΩ

100 mΩ

Gate to Source Voltage (Vgs)

12 V

8 V

Power Dissipation

340 mW

500 mW

Input Capacitance

110 pF

220 pF

Supply Chain

Country of OriginMainland China, Philippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1995-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-07-31

LTD Date2025-01-31

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Descriptions

Descriptions of Infineon IRLML2402TRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-12V

RS (Formerly Allied Electronics)

20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Single N-Channel 20 V 0.25 Ohm 2.6 nC HEXFET® Power Mosfet - MICRO-3

Future Electronics

Transistor, MOSFETS, HEX/MOS N-Channel, 20V, 1.2A, SOT-23

Sensible Micro

HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:930mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 12 / Fall Time ns = 4.8 / Rise Time ns = 9.5 / Turn-OFF Delay Time ns = 9.7 / Turn-ON Delay Time ns = 2.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540

Distrelec

MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.2A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.4A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.54W; Power, Pd:0.54W; Quantity, Reel:3000; SMD Marking:1A; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.7V; Width, External:3.05mm; Width, Tape:8mm

Farnell