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Infineon IRLML6302TRPBF

Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.6 Ohm; Id -0.78A; MICRO3; Pd 540MW; Vgs +/-12V
$ 0.176
Obsolete

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML6302TRPBF.

element14 APAC

Datasheet10 pages12 years ago
Datasheet9 pages12 years ago

Newark

IHS

TME

HQonline

Inventory History

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2024-07-31
LTD Date2025-01-31

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Descriptions

Descriptions of Infineon IRLML6302TRPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.6Ohm;ID -0.78A;Micro3;PD 540mW;VGS +/-12V
Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Mosfet, P-Ch, 20V, 0.78A, Sot-23 Rohs Compliant: Yes |Infineon Technologies IRLML6302TRPBF
Infineon P-Channel MOSFET HEXFET, Vds=20V, 780mA, SOT-23, SMD, 3-Pin
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-610mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-780mA; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:-4.5V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -780 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 12 / Fall Time ns = 22 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFIRLML6302TRPBF
  • IRLML6302
  • IRLML6302*
  • IRLML6302TRPBF.
  • SP001574060