Descriptions of Infineon IRLML6246TRPBF provided by its distributors.
MOSFET, 20V, 4.1A, 46 MOHM, 3.5 NC QG, 2.5V DRIVE CAPABLE, SOT-23
Power MOSFET, N Channel, 20 V, 4.1 A, 0.046 ohm, TO-236AB (SOT-23), Surface Mount
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 20 V 66 mOhm 3.5 nC HEXFET® Power Mosfet - SOT-23
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R / MOSFET N-CH 20V 4.1A SOT-23
Infineon N-Channel HEXFET MOSFET, Vds=20V, 4.1A, SOT-23, SMD, 3-Pin
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
HEXFET Power MOSFET Small Signal Field-Effect Transistor
20V 4.1A 1.3W 46m´Î@4.5V4.1A 1.1V@5Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Mosfet,n Ch,diode,20V,4.1A,sot-23; |Infineon Technologies IRLML6246TRPBF
MOSFET,N CH,DIODE,20V,4.1A,SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4.1A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.