Descriptions of Infineon IRFP4468PBF provided by its distributors.
IRFP4468PBF N-channel MOSFET Transistor, 290 A, 100 V, 3-Pin TO-247AC
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 520 W
Single N-Channel 100 V 2.6 mOhm 540 nC HEXFET® Power Mosfet - TO-247AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 290 A, 0.002 ohm, TO-247AC, Through Hole
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N CHANNEL MOSFET, 100V, 290A, TO-247AC;; N CHANNEL MOSFET, 100V, 290A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:290A; Drain Source ; Available until stocks are exhausted Alternatives available
N Channel Mosfet, 100V, 290A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:290A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Infineon IRFP4468PBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, 100V 290A TO-247AC; Transistor Type:Power MOSFET; Transistor Polarity:N; Typ Voltage Vds:100V; Cont Current Id:290A; On State Resistance:2mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:4V; Case Style:TO-247AC; Termination Type:Through Hole; Operating Temperature Range:-55°C to + 175°C; Max Voltage Vds:100V; Power Dissipation:520W; Pulse Current Idm:1120A; Transistor Case Style:TO-247AC