Infineon IRFP4368PBF

Name: Infineon IRFP4368PBF
Brand: Infineon
SKU: IRFP4368PBF

IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC

$ 4.242

EOL

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFP4368PBF	221	1		5.225	5.225	5.225	5.225	5.225
Rochester Electronics		IRFP4368PBF	30,666					3.320	2.970	2.790	1h
Future Electronics	2	IRFP4368PBF	0	5	Tube		4.760	4.590	4.410	4.410
RS (Formerly Allied Electronics)		IRFP4368PBF	0	1	Bulk	11.590	10.200	10.200	10.200	10.200	2h
Avnet		IRFP4368PBF	0	400					3.256	3.206	4d

Inventory History

3 month trend: -2.13%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4368PBF.

IHS

Datasheet8 pages17 years ago

Datasheet9 pages17 years ago

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Inventory History

3 month trend:

-2.13%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-06-02

Lifecycle StatusEOL (Last Updated: 4 months ago)

LTB Date2026-05-31

LTD Date2026-11-30

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Descriptions

Descriptions of Infineon IRFP4368PBF provided by its distributors.

IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC

RS (Formerly Allied Electronics)

Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 75 V, 350 A, 0.00185 ohm, TO-247AC, Through Hole

Avnet

HEXFET Power MOSFET Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

ComSIT Distribution GmbH

MOSFET, 75V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:75V; On Resistance Rds(on):1.46mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1280A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon