Infineon IRFP4110PBF

Name: Infineon IRFP4110PBF
Brand: Infineon
SKU: IRFP4110PBF

IRFP4110PBF N-channel MOSFET Transistor, 180 A, 100 V, 3-Pin TO-247AC

$ 1.736

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Distributor		SKU	Min	Pkg
RS (Formerly Allied Electronics)		IRFP4110PBF	2	Bulk		1.910	1.830	1.830	1.830	14h
Avnet		IRFP4110PBF	400					1.371	1.320	4d
Future Electronics	2	IRFP4110PBF	10	Tube		2.020	1.990	1.940	1.880
Arrow Electronics		IRFP4110PBF	400					1.406	1.375
Farnell		IRFP4110PBF	1		5.038*	4.261*	3.256*	2.198*	2.198*	17h

Inventory History

3 month trend: -0.47%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4110PBF.

IHS

Datasheet8 pages18 years ago

Datasheet9 pages18 years ago

iiiC

Inventory History

3 month trend:

-0.47%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-03-03

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2026-05-31

LTD Date2026-11-30

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Descriptions

Descriptions of Infineon IRFP4110PBF provided by its distributors.

IRFP4110PBF N-channel MOSFET Transistor, 180 A, 100 V, 3-Pin TO-247AC

RS (Formerly Allied Electronics)

Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:180A; Package / Case:TO-247AC; Power Dissipation Pd:370W; Pulse Current Idm:670A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon