Infineon IRFP4229PBF

Name: Infineon IRFP4229PBF
Brand: Infineon
SKU: IRFP4229PBF

MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W

$ 1.672

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFP4229PBF	3,922	1		1.475	1.475	1.475	1.462	1.462
Rochester Electronics	2	IRFP4229PBF	22,423					1.510	1.350	1.270	19h
Avnet		IRFP4229PBF	0	400					1.477	1.454	5d
RS (Formerly Allied Electronics)		IRFP4229PBF	0	2	Bulk		2.040	1.950	1.950	1.950	10h
Future Electronics	2	IRFP4229PBF	0	25	Tube			2.120	2.060	2.030

Inventory History

3 month trend: -0.58%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4229PBF.

Newark

Datasheet9 pages18 years ago

IHS

iiiC

Inventory History

3 month trend:

-0.58%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-04-12

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2026-05-31

LTD Date2026-11-30

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Descriptions

Descriptions of Infineon IRFP4229PBF provided by its distributors.

MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W

Fly-Wing Technology

250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHS

Infineon SCT

MOSFET, N Ch., 250V, 44A, 46 MOHM, 72 NC QG, TO-247AC, Pb-Free

RS (Formerly Allied Electronics)

Single N-Channel 250 V 46 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

Power MOSFET, HEXFET, N Channel, 300 V, 44 A, 0.038 ohm, TO-247AC, Through Hole

Avnet

Power Field-Effect Transistor, 44A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:300V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:44A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:180A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon