Infineon IRFP4332PBF

MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W

MOSFET, N Ch., 250V, 57A, 33 MOHM, 99 NC QG, TO-247AC, Pb-Free

Single N-Channel 250 V 33 mOhm 150 nC HEXFET® Power Mosfet - TO-247AC

PDP SWITCH HEXFET POWER MOSFET Power Field-Effect Transistor, 57A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:300V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:120mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:57A; Package / Case:TO-247AC; Power Dissipation Pd:120mW; Pulse Current Idm:230A; SMD Marking:120; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.