Infineon IRFP140NPBF

Name: Infineon IRFP140NPBF
Brand: Infineon
SKU: IRFP140NPBF

MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC

$ 1.011

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Newark		IRFP140NPBF	798	1		2.840	1.580	1.280	1.000	1.000
Future Electronics	2	IRFP140NPBF	650	25	Tube			1.440	1.400	1.360
Arrow Electronics	2	IRFP140NPBF	5,100	1		0.956	0.956	0.774	0.758	0.716
Avnet		IRFP140NPBF	0	25				0.748	0.712	0.712	11h
RS (Formerly Allied Electronics)		IRFP140NPBF	0	1	Bulk	2.810	2.470	2.470	2.470	2.470	22h

Inventory History

3 month trend: -7.26%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP140NPBF.

Newark

Datasheet10 pages21 years ago

Datasheet9 pages21 years ago

Datasheet9 pages22 years ago

IHS

DigiKey

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

-7.26%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusProduction (Last Updated: 3 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

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Descriptions

Descriptions of Infineon IRFP140NPBF provided by its distributors.

MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC

RS (Formerly Allied Electronics)

Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC

Future Electronics

Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

Avnet

100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET | MOSFET N-CH 100V 33A TO-247AC

Win Source

HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

ComSIT Distribution GmbH

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:33A; Package / Case:TO-247AC; Power Dissipation Pd:94W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

N Channel Mosfet, 100V, 33A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFP140NPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon