Infineon IRFP9140NPBF

Name: Infineon IRFP9140NPBF
Brand: Infineon
SKU: IRFP9140NPBF

Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-247AC

$ 0.901

EOL

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Distributor		SKU		Min	Pkg
Avnet	2	63J6897	63	1		2.930	1.630	1.310	1.150	1.000	22h
Newark		IRFP9140NPBF	63	1		3.020	1.680	1.350	1.030	1.000
Future Electronics	2	IRFP9140NPBF	150	25	Tube			0.900	0.850	0.800
Arrow Electronics	3	IRFP9140NPBF	8,400	1		0.831	0.749	0.705	0.679	0.653
Rochester Electronics		IRFP9140NPBF	2,683					1.160	0.963	0.858	19h

Inventory History

3 month trend: -16.55%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP9140NPBF.

Newark

Datasheet10 pages21 years ago

Datasheet8 pages28 years ago

IHS

RS (Formerly Allied Electronics)

iiiC

DigiKey

Inventory History

3 month trend:

-16.55%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-01-01

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFP9140NPBF provided by its distributors.

Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

MOSFET, P-CHANNEL, -100V, -21A, 117 mOhm, 64.7 nC Qg, TO-247AC

RS (Formerly Allied Electronics)

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) | MOSFET P-CH 100V 23A TO-247AC

Win Source

-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

P Channel Mosfet, -100V, 23A, To-247Ac; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFP9140NPBF.

Newark

MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:120W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-23A; Package / Case:TO-247AC; Power Dissipation Pd:120W; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon