Infineon IRFH7911TRPBF

Name: Infineon IRFH7911TRPBF
Brand: Infineon
SKU: IRFH7911TRPBF

Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFH7911TRPBF	0	4K	Bulk					2.342	16h
Farnell	IRFH7911TRPBF	0	1		1.327*	1.327*	1.027*	0.819*	0.819*	2h
Win Source	WS-IRFH7911TRPBF	3,100	1		81.604	54.403	54.403	54.403	54.403	3h
Worldway Electronics	IRFH7911TRPBF	9,264	7	Tape & Reel		0.841	0.825	0.793	0.777	1d
ICPartonline	IRFH7911TRPBF	7,071			1.308	1.243	1.177	1.112	1.046	>1wk

Inventory History

3 month trend: -15.02%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFH7911TRPBF.

IHS

Datasheet12 pages12 years ago

Datasheet11 pages12 years ago

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Inventory History

3 month trend:

-15.02%

Alternate Parts

This Part

Alternate Parts

InfineonIRFH7911TRPBF

InfineonIRFH7911TR2PBF

Price @ 1000

$ 0.94

Stock

286,719

14,105

Authorized Distributors

Mount

Surface Mount

Case/Package

QFN

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

13 A

Threshold Voltage

2.35 V

Rds On Max

8.6 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.4 W

Input Capacitance

1.06 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-10-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFH7911TRPBF provided by its distributors.

Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Future Electronics

30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PQFN 5X6 18L, RoHS

Infineon SCT

Trans MOSFET Array Dual N-CH 30V 13A/28A 18-Pin PQFN EP T/R

Avnet

DUAL N CH MOSFET, 30V, PQFN-18; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes

Newark

Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.9 mm); Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2

Infineon

MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:18; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:2.4W

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