Infineon IRFHM9331TRPBF
Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET® Power Mosfet - PQFN 3 x 3 mm
$ 0.388
Obsolete
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Inventory History
3 month trend: -41.22%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFHM9331TRPBF.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-30
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
Related Parts
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30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
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Descriptions
Descriptions of Infineon IRFHM9331TRPBF provided by its distributors.
Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET® Power Mosfet - PQFN 3 x 3 mm
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package, PQFN 3X3 8L, RoHS
Infineon SCT
Mosfet, P-Ch, 30V, 11A, Pqfn Rohs Compliant: Yes |Infineon Technologies IRFHM9331TRPBF
Infineon PChannel EnhancedMOSTube, Vds=30 V, 11 A, PQFNencapsulation, surface mount, 8Pin
Transistor P-MOSFET IRFHM9331TRPBF, PQFN-8, IRF
Power MOSFET, P Channel, 30 V, 11 A, 0.01 ohm, PQFN, Surface Mount
Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R
MOSFET P-CH 30V 11A/24A PQFN "P-Channel 30 V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3)"
MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V;
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -11 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 14.6 / Gate-Source Voltage V = 25 / Fall Time ns = 60 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.8
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -41.22%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.543 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance14.6 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max10 mΩ
Resistance14.6 MΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time72 ns
Turn-On Delay Time11 ns
Dimensions
Height1 mm
Length2.9972 mm
Width2.9972 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFHM9331TRPBF.
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements