Infineon IRFH3702TRPBF
$ 0.313
Obsolete
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Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-02-12
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
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Descriptions
Descriptions of Infineon IRFH3702TRPBF provided by its distributors.
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
Infineon SCT
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R
MOSFET N-CH 30V 16A/42A 8PQFN "N-Channel 30 V 16A (Ta), 42A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)"
Transistor; Continuous Drain Current, Id:16A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.1 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time5.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.51 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance7.1 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max7.1 mΩ
Rise Time15 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time9.6 ns
Dimensions
Height1 mm
Length2.9972 mm
Width2.9972 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements