Infineon IRFB4620PBF

Name: Infineon IRFB4620PBF
Brand: Infineon
SKU: IRFB4620PBF

Single N-Channel 200 V 72.5 mOhm 38 nC HEXFET® Power Mosfet - TO-220-3

$ 0.924

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Distributor		SKU		Min	Pkg
Avnet	2	45P3444	226	1		2.100	1.190	1.180	0.921	0.853	8h
Newark		IRFB4620PBF	418	1		2.100	1.190	1.180	0.918	0.849
Arrow Electronics		IRFB4620PBF	610	1		0.970	0.970	0.970	0.970	0.970
Rochester Electronics		IRFB4620PBF	205,202					1.120	0.930	0.829	6h
DigiKey		IRFB4620PBF-ND	1,060	1	Tube	2.970	2.970	1.322	0.983	0.825

Inventory History

3 month trend: +1.12%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet8 pages17 years ago

Datasheet9 pages17 years ago

iiiC

Inventory History

3 month trend:

+1.12%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-04-28

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IRFB4620PBF provided by its distributors.

Single N-Channel 200 V 72.5 mOhm 38 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET, N Ch., 200V, 27A, 70.7 MOHM, 28NC QG, TO-220AB, Pb-Free

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 200V 25A 3-Pin(3+Tab) TO-220AB

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon