Infineon IRFB31N20DPBF

Name: Infineon IRFB31N20DPBF
Brand: Infineon
SKU: IRFB31N20DPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.082 Ohm; Id 31A; TO-220AB; Pd 200W; Vgs +/-30V

$ 6.04

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFB31N20DPBF	0	10	Bulk		6.710	6.040	6.040	6.040	5h
Farnell	IRFB31N20DPBF	0	1		1.173*	0.880*	0.680*	0.493*	0.493*	3h
Microchip USA	IRFB31N20DPBF	314	300	Bulk				5.980	5.980	3d
Component Stockers USA	IRFB31N20DPBF	292			99.990	99.990	99.990	99.990	99.990	>1wk
Weyland Electronics Group Pte. Ltd.	IRFB31N20DPBF	8,185	1	Tape & Reel	1.196	1.196	1.196	1.196	1.196	3d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB31N20DPBF.

IHS

Datasheet13 pages22 years ago

Datasheet11 pages0 years ago

Newark

RS (Formerly Allied Electronics)

iiiC

Entegreci

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-11-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

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Descriptions

Descriptions of Infineon IRFB31N20DPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V

RS (Formerly Allied Electronics)

Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3

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200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

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Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

Distrelec

SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

element14 APAC

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon