onsemi FDP33N25

Name: onsemi FDP33N25
Brand: onsemi
SKU: FDP33N25

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220

$ 0.985

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Distributor		SKU		Min	Pkg
Avnet	2	FDP33N25	763	893					0.683	0.664	6d
Newark		FDP33N25	765	1		3.280	2.470	1.660	1.330	1.240
Arrow Electronics		FDP33N25	1,080	1		1.223	1.223	1.103	0.937	0.937
Verical		FDP33N25	1,078	7			1.230	1.109	0.942	0.942
DigiKey		FDP33N25-ND	1,146	1	Tube	2.920	2.920	1.305	0.973	0.882

Inventory History

3 month trend: -62.91%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDP33N25.

Newark

Datasheet0 pages0 years ago

Datasheet8 pages21 years ago

Datasheet0 pages0 years ago

Upverter

IHS

onsemi

Farnell

Inventory History

3 month trend:

-62.91%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-07-14

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDP33N25 provided by its distributors.

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220

onsemi

Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail

Verical

N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes

Newark

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

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