onsemi FDPF39N20

Name: onsemi FDPF39N20
Brand: onsemi
SKU: FDPF39N20

N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F

$ 1.048

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Distributor	SKU		Min	Pkg
Avnet	FDPF39N20	1,000	1K					1.047	0.939	1d
DigiKey	FDPF39N20-ND	5,744	1	Tube	3.000	3.000	1.344	1.005	0.916
Flip Electronics	FDPF39N20	1,000								3d
Newark	FDPF39N20	0	1		3.380	2.550	1.720	1.380	1.290
Onlinecomponents.com	FDPF39N20	0	250	Bulk				1.010	1.010

Inventory History

3 month trend: -25.96%

CAD Models

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Alternate Parts

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Datasheets & Documents

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Datasheet0 pages0 years ago

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Inventory History

3 month trend:

-25.96%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-03-06

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDPF39N20 provided by its distributors.

N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F

onsemi

FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP

Future Electronics

Power MOSFET, N Channel, 200 V, 39 A, 0.066 ohm, TO-220F, Through Hole

Avnet

200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor