Infineon IRFB23N20DPBF
$ 4.93
Obsolete
Price and Stock
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Inventory History
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CAD Models
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-26
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Related Parts
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MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
InfineonIRFB5620PBF
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
Descriptions
Descriptions of Infineon IRFB23N20DPBF provided by its distributors.
Single N-Channel 200 V 100 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A) | MOSFET N-CH 200V 24A TO-220AB
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB
200V 24A 100m´Î@10V14A 170W 5.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Infineon N-Ch MOSFET HEXFET Vds=200V 24A TO-220AB TH 3-Pin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 1200pF 1000volt U2J +/-5%
HEXFET POWER MOSFET Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)24 A
Current Rating24 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation170 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance100 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max100 mΩ
Resistance100 MΩ
Rise Time32 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5.5 V
Turn-Off Delay Time26 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)200 V
Dimensions
Height20.56 mm
Length10.54 mm
Width4.699 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements