Infineon IRF8313PBF

Name: Infineon IRF8313PBF
Brand: Infineon
SKU: IRF8313PBF

Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF8313PBF	0	3800	Bulk					0.284	17h
Win Source	WS-IRF8313PBF	14,450	20				2.015	1.746	1.746	2h
Worldway Electronics	IRF8313PBF	10,153	7	Tube		0.100	0.097	0.092	0.092	3d
ICPartonline	IRF8313PBF	25,299			0.318	0.302	0.287	0.271	0.255	>1wk
Voyager Components	IRF8313PBF-IR-1048	645			0.640	0.640	0.484	0.270	0.270	7h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8313PBF.

Newark

Datasheet10 pages17 years ago

IHS

iiiC

Alternate Parts

This Part

Alternate Parts

InfineonIRF8313PBF

InfineonIRF8313TRPBF

Price @ 1000

$ 1.24

Stock

151,203

1,267,005

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

9.7 A

Threshold Voltage

1.8 V

Rds On Max

15.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2 W

Input Capacitance

760 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-11-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

Related Parts

InfineonIRF8707GTRPBF

N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin

Details

InfineonIRF8707PBF

IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC

Details

InfineonIRF8313TRPBF

Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC T/R

Details

InfineonIRF8513PBF

Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8

Details

onsemiFDS6690AS

N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Details

onsemiFDS6690A

N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ

Details

Descriptions

Descriptions of Infineon IRF8313PBF provided by its distributors.

Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC Tube

Avnet

Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V

Newark

MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

element14 APAC