Infineon IRF8513PBF

Name: Infineon IRF8513PBF
Brand: Infineon
SKU: IRF8513PBF

Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF8513PBF	0	3800	Bulk					1.039	6h
Farnell	IRF8513PBF	0	1		0.751*	0.751*	0.546*	0.423*	0.423*	4h
Win Source	WS-IRF8513PBF	4,610	95				0.615	0.410	0.410	18h
Worldway Electronics	IRF8513PBF	19,057	7	Tube		0.326	0.316	0.299	0.299	1d
Anlinkda	IRF8513PBF	35,588			0.403	0.361	0.309	0.299	0.288	3d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8513PBF.

element14 APAC

Datasheet11 pages17 years ago

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-11-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-10-25

LTD Date2015-04-25

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Descriptions

Descriptions of Infineon IRF8513PBF provided by its distributors.

Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

element14 APAC