Infineon IRF7769L2TRPBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7769L2TRPBF | 0 | 4K | Bulk | 2h | |||||||
| Farnell | IRF7769L2TRPBF | 0 | 1 | Cut Tape | 11h | |||||||
| Win Source | WS-IRF7769L2TRPBF | 313 | 14 | 12h | ||||||||
| Worldway Electronics | IRF7769L2TRPBF | 13,098 | 7 | Tape & Reel | 16h | |||||||
| Aztech | IRF7769L2TRPBF | 600 | 2d |
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
 EE Concierge | SymbolFootprint | ||
 SnapEDA | Footprint | 3D | Download |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-11
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-12-15
LTD Date2021-06-15
Related Parts
InfineonAUIRF7769L2TR
Power MOSFET, N Channel, 100 V, 124 A, 3.5 mOhm, DirectFET L8, 15 Pins, Surface Mount
InfineonIRF7759L2TRPBF
Trans MOSFET N-CH Si 75V 160A 15-Pin Direct-FET L8 T/R / MOSFET N-CH 75V DIRECTFET L8
InfineonAUIRF7759L2TR
Power Field-Effect Transistor, 375A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descriptions
Descriptions of Infineon IRF7769L2TRPBF provided by its distributors.
Trans MOSFET N-CH 100V 0.6A 4-Pin(3+Tab) SOT-223 T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:124A; On Resistance Rds(On):0.0028Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 20 amperes optimized for high frequency switching and synchronous rectification applications. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
MountSurface Mount
Number of Terminals9
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.56 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.7 V
Number of Channels1
Number of Elements1
Power Dissipation3.3 W
Rds On Max3.5 mΩ
Recovery Time112 ns
Rise Time32 ns
Schedule B8541290080
Turn-Off Delay Time92 ns
Turn-On Delay Time44 ns
Dimensions
Height676 µm
Length9.144 mm
Width7.112 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements