onsemi FDBL0150N80
$ 3.04
Production
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Inventory History
3 month trend: -7.30%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-03-17
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
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Descriptions
Descriptions of onsemi FDBL0150N80 provided by its distributors.
N-Channel PowerTrench® MOSFET, 80V, 300A, 1.4mΩ
Power Field-Effect Transistor, 300A I(D), 80V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-299A
429W(Tj) 20V 4V@ 250µA 188nC@ 10V 1individualNChannel 80V 1.4mΩ@ 80A,10V 300A 12.8nF@25V HPSOF-8 SMD mount 2.4mm(height)
MOSFET, N-CH, 80V, 300A, MO-299A-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 300A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -7.30%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals2
Weight850.0521 mg
Technical
Continuous Drain Current (ID)300 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.8 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation429 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation429 W
Rds On Max1.4 mΩ
Turn-Off Delay Time87 ns
Turn-On Delay Time42 ns
Dimensions
Height2.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements