Infineon IRF640NSTRLPBF

Name: Infineon IRF640NSTRLPBF
Brand: Infineon
SKU: IRF640NSTRLPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.15 Ohm; Id 18A; D2PAK; Pd 150W; Vgs +/-20V; -55

$ 0.552

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Distributor		SKU		Min	Pkg
Avnet	2	IRF640NSTRLPBF	13,600	800					0.453	0.446	4d
Newark	3	IRF640NSTRLPBF	824	1	Cut Tape	0.554	0.554	0.554	0.554	0.554
Future Electronics	3	IRF640NSTRLPBF	56,000	800	Tape & Reel				0.550	0.525
Arrow Electronics	4	IRF640NSTRLPBF	1,516	1		1.509	1.012	0.589	0.564	0.564
DigiKey	3	IRF640NSTRLPBFCT-ND	1,581	1	Cut Tape	2.080	1.323	0.892	0.666	0.521

Inventory History

3 month trend: -11.63%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF640NSTRLPBF.

Newark

Datasheet11 pages15 years ago

Datasheet12 pages15 years ago

iiiC

RS (Formerly Allied Electronics)

Jameco

DigiKey

Inventory History

3 month trend:

-11.63%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF640NSTRLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 200 Volt 18 .6 Amp 3 Pin 2+ Tab D2pak Tape and Reel

Jameco

Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 200V 18A D2PAK

Win Source

Single N-Channel 200V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-263AB, Surface Mount

Avnet

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF640NSTRLPBF.

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 150 / Gate-Source Voltage V = 20 / Fall Time ns = 5.5 / Rise Time ns = 19 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 150

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