Vishay IRF640SPBF

Name: Vishay IRF640SPBF
Brand: Vishay
SKU: IRF640SPBF

Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3

$ 1.094

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Verical		IRF640SPBF	29	2			1.780	1.633	0.794	0.786
Arrow Electronics		IRF640SPBF	29	1		3.114	1.780	1.780	1.780	1.780
TME	2	IRF640SPBF	0	1		2.320	1.440	1.160	0.940	0.840	18h
TTI		IRF640SPBF	0	50	Tube			0.980	0.900	0.880	22h
Newark		IRF640SPBF	0	1		4.300	2.440	2.260	1.850	1.850

Inventory History

3 month trend: -53.43%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRF640SPBF.

Upverter

Datasheet10 pages2 years ago

Newark

Farnell

TME

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-53.43%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishayIRF640SPBF

VishayIRF640STRRPBF

Price @ 1000

$ 1.094

$ 0.875

Stock

146,173

129,818

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

D2PAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

18 A

Threshold Voltage

4 V

Rds On Max

180 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.1 W

130 W

Input Capacitance

1.3 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRF640SPBF provided by its distributors.

Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3

Future Electronics

IRF640SPBF N-channel MOSFET Transistor; 18 A; 200 V; 3-Pin D2PAK

Fly-Wing Technology

Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK

Verical

MOSFET N-CH 200V 18A D2PAK | Siliconix / Vishay IRF640SPBF

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

N Channel Mosfet, 200V, 18A, D2-Pak; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: No |Vishay IRF640SPBF.

Newark